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| NTE5629 TRIAC - 400VRM, 4Amp Description: The NTE5629 TRIAC is a bi-directional triode thyristor in a TO202 type case. This device may be switched from off-state to conduction for either polarity of applied voltage with positive or negative gate-trigger current. The NTE5629 can be driven directly with IC and MOS devices and is designed for control applications in lighting, heating, cooling, and static switching relays. Absolute Maximum Ratings: Repetitive Peak Off-State Voltage (Gate Open, TJ = +110C, Note 1), VDRM . . . . . . . . . . . . . . 400V RMS On-State Current (TC = +80C, Conduction Angle = 360), IT(RMS) . . . . . . . . . . . . . . . . . . . 4A Non-Repetitive Peak Surge On-State Current (One-Cycle, at 50Hz or 60Hz), ITSM . . . . . . . . 40A Peak Gate-Trigger Current (for 3s Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A Peak Gate-Power Dissipation (IGT IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15W Average Gate-Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3W Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +110C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4C/W Typ Electrical Characteristics: (At Specified Case Temperature) Peak Off-State Current (Gate Open, TC = +110C, VDRM = 400V, Note 1), IDRM . . . . . 0.5mA Max Maximum On-State Voltage (TC = +25C, IT = 4A, Note 1), VTM . . . . . . . . . . . . . . . . . . . . . 1.6V Max DC Holding Current (Gate Open, TC = +25C, Note 1), IHold . . . . . . . . . . . . . . . . . . . . . . . . 5mA Max Critical Rate-of-Rise of Off-State Voltage, Critical dv/dt (VD = 400V, Gate Open, TC = +110C, Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V/s Critical rate-of-Rise of commutation Voltage, Commutating dv/dt (VD = 400V, IT = 4A, Gate Unenergized, TC = +80C, Note 1) . . . . . . . . . . . . . . . . . . . . 1V/s DC Gate-Trigger Current (VD = 12VDC, RL = 60, TC = +25C), IGT . . . . . . . . . . . . . . . . . 3mA Max (T2+ Gate +, T2- Gate -) Quads I and III (T2+ Gate -, T2- Gate +) Quads II and IV DC Gate-Trigger Voltage (VD = 12VDC, RL = 60, TC = +25C), VGT . . . . . . . . . . . . . . . . . . 2V Max Gate-Controlled Turn-On Time, Tgt (VD = 400V, IGT = 80mA, tR = 0.1s, IT = 6A (Peak), TC = +25C) . . . . . . . . . . . . . . . . . . . 3s Note 1. All values apply in either direction. .380 (9.56) .180 (4.57) MT2 .132 (3.35) Dia .500 (12.7) 1.200 (30.48) Ref .325 (9.52) .070 (1.78) x 45 Chamf .300 (7.62) MT2 .050 (1.27) .400 (10.16) Min MT1 Gate .100 (2.54) .100 (2.54) |
Price & Availability of NTE5629
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